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| DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 1 2 SOT-23 FEATURES * Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz * High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 200 150 to +150 V V V mA mW C C ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre** 82 170 7 0.55 2 MIN. TYP. MAX. 1.0 1.0 270 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA A A GHz 1.0 pF dB 2.0 dB VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz S21e NF 11.5 1.1 * Pulse Measurement PW 350 s, Duty Cycle 2 % ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. Driver Marking L2SC3356LT1=R24 L2SC3356LT1-1/4 LESHAN RADIO COMPANY, LTD. TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE PT-Total Power Dissipation-mW 200 Cre-Feed-back Capacitance-pF Free Air f = 1.0 MHz 1 100 0.5 0 50 100 150 0.3 0 0.5 1 2 5 10 20 30 TA-Ambient Temperature-C DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT hFE-DC Current Gain 100 |S21e|2-Insertion Gain-dB 10 50 5 VCE = 10 V f = 1.0 GHz 1 5 10 50 70 IC-Collector Current-mA 20 10 0.5 1 5 10 50 0 0.5 IC-Collector Current-mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax fT-Gain Bandwidth Product-MHz 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 30 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB 5.0 20 |S21e|2 10 0 VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz IC-Collector Current-mA L2SC3356LT1-2/4 LESHAN RADIO COMPANY, LTD. NOISE FIGURE vs. COLLECTOR CURRENT 7 6 NF-Noise Figure-dB VCE = 10 V f = 1.0 GHz |S21e|2-Insertion Gain-dB 18 15 NF-Noise Figure-dB 5 4 3 2 1 0 0.5 1 5 10 50 70 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 2 |S21e| 3 2 NF 1 12 6 3 0 0 2 4 6 8 10 IC-Collector Current-mA VCE-Collector to Emitter Voltage-V L2SC3356LT1-3/4 LESHAN RADIO COMPANY, LTD. SOT-23 NOTES: A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SC3356LT1-4/4 |
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